Excelitas C30659-900-R5BH
the C30645EH and C30662EH products. These detectors provide very good response between 830 and 1550 nm and very fast rise- and fall-times at all wavelengths. The preamplifier section of the module uses a very low noise GaAs FET front end designed to operate at higher transimpedance than Excelitas’ regular C30950 Series.| Part No. | C30659-900-R5BH |
|---|---|
| Datasheet | C30659-900-R5BH Download |
| Manufacturer |  Excelitas |
| Description | Si and InGaAs APD Preamplifier |
| Buy | Stock & Price |
FEATURES
● System bandwidths of 50 MHz and 200MHz● Ultra low noise equivalent power (NEP)
● Spectral response range: – With Si APD: 400 to 1100 nm – With InGaAs APD: 1100 to 1700 nm
● Typical power consumption: 150 mW
● ±5 V amplifier operating voltages
● 50 Ω AC load capability (AC-Coupled)
● Hermetically-sealed TO-8 package
● High reliability
● Fast overload recovery
● Pin-to-pin compatible with the C30950 Series
● Light entry angle, over 130°
● Model 1550E exhibits enhanced damage threshold
● RoHS-compliant
APPLICATIONS
● Range finding● LIDAR
● Confocal microscopy C30659 Series – 900/1060/1550/1550E Si and InGaAs APD Preamplifier Modules Table 1. Performance Specifications − C30659-900 Models (900 nm peak response Si APD) Test conditions: Case temperature = 22˚C, Vamp = ±5 V, HV = Vop (see Note 1), RL = 50 Ω AC coupled Detector Type C30659-900-R8AH (C30817EH APD) C30659-900-R5BH (C30902EH APD) Parameter Min Typical Max Min Typical Max Units Active diameter 0.8 0.5 mm Active area 0...
