C30956EH Datasheet | Excelitas

Photon Detection C30954EH, C30955EH and C30956EH Series Long Wavelength Enhanced Silicon Avalanche Photodiodes for range finding, LIDAR, and YAG laser detection Excelitas’ C30954EH, C30955EH, and C30956EH are general purpose silicon avalanche photodiodes made using a double-diffused "reach through" structure. The design of these photodiodes is such that their long wave response (i.e. > 900 nm) has been enhanced without introducing any undesirable properties. These APDs have quantum efficiency of up to 40% at 1060 nm. At the same time, the diodes retain the low noise, low capacitance, and fast rise and fall times characteristics. Standard versions of these APDs are available in hermetically-sealed, flat top glass TO-5 packages for the smaller area C30954EH and C30955EH, and a TO-8 package for the larger area C30956EH. To help simplify many design needs, these Si APDs are also available in Excelitas’ high-performance hybrid preamplifier module, C30659 Series, as well as the preamplifier and Thermo-electric (TE) cooler incorporated module, the LLAM Series. Recognizing that different applications have different performance requirements, Excelitas offers a wide range of customization options for these APDs to meet your design challenges. TE cooler-packaged versions are available on a custom basis. Operating and breakdown voltage selection, dark current and NEP screening, custom device testing and packaging are among the many application-specific solutions available. .excelitas. Page 1 of 8 Key Features - High quantum efficiency at 1060 nm - Fast response time - Wide operating temperature range - Low capacitance - Hermetically-sealed packages - Ro HS-pliant Applications - Range finding - LIDAR - YAG laser detection C30954-955-956EH series Rev.2011-12 C30954EH, C30955EH, C30956EH Series Long Wavelength Enhanced Silicon Avalanche Photodiodes Table 1. Mechanical and Optical Characteristics Photosensitive surface C30954EH C30955EH Uni...