DPGEW1S09H Datasheet | Excelitas

feature stripe widths of 75 and 225 µm and e as single (PGEW), double (DPGEW), triple (TPGEW), or quadruple (QPGEW) epi-cavity version. These devices possess a 25° beam divergence in the direction perpendicular to chip surface and a 10° beam spread within the junction plane. The power output shows an excellent stability over the full MIL specification temperature range. Structures are fabricated using metal organic chemical vapour deposition (MOCVD). Where fiber coupling applications are concerned, the transverse spacing of the epi-cavity active area concentrates more optical power into a smaller geometry allowing for increased optical power coupling into optical fibers. Peak wavelength is centered near the maximum responsivity of most silicon photodiodes. The PGEW lasers match especially well with devices from the Excelitas epi-APD family C30737. The devices are ideally suited for applications where cost is a primary concern and high volume production capacity is required. .excelitas. Page 1 of 6 Intensity of light is shown from single-cavity, dual-cavity, triplecavity and quad-cavity lasers. Key Features - Doubling, tripling or quadrupling of the output power from a single epi-cavity chip with a small active area - Peak power over 100 W at 20 ns pulse width - High reliability - Small emitting areas increase fiber coupled output - Lower cost plastic packaging for high volume - Ro HS pliant Applications - Laser range finding - Laser-based speed enforcement - IR-illumination - Laser skin therapy PGEW Multi-epi series Rev.2016-05 PGEW Series of Single-epi and Multi-epi 905 nm Pulsed Semiconductor Lasers Low-Cost High-Power Laser-Diode Family for mercial Range Finding Table 1: PGEW Pulsed Laser Family Selection Guide Device Description PGEW1SXXH Single chip laser - Single epi-cavity DPGEW1SXXH Single chip laser - Double epi-cavity TPGEW1SXXH Single chip laser - Triple epi-cavity QPGEW1SXXH Single chip laser - Quad epi-cavity Total # of emitting...