A06N03N Overview
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pulse Width 300 sec, Duty Cycle 2％. 3Pulse width limited by maximum junction temperature.
A06N03N Datasheet Details
| Part number | A06N03N |
|---|---|
| Datasheet | A06N03N-ExcellianceMOS.pdf |
| File Size | 227.87 KB |
| Manufacturer | Excelliance MOS |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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