EMB02N03HR - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMB02N03HR
Manufacturer	Excelliance MOS
File Size	309.48 KB
Description	Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB02N03HR Datasheet

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 1.7mΩ ID 100A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free EMB02N03HR ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=80A, RG=25Ω Repetitive Avalanche Energy3 L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg ±20 100 100 400 80 320 160 83 33 ‐55 to 150 100% UIS testing in condition of VD=15V, L=0.