Datasheet4U Logo Datasheet4U.com

EMB05N03HR - N-Channel Logic Level Enhancement Mode Field Effect Transistor

📥 Download Datasheet

Datasheet Details

Part number EMB05N03HR
Manufacturer Excelliance MOS
File Size 212.46 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMB05N03HR Datasheet

📁 Similar Datasheet

  • EMB09P03A - P-Channel 30V MOSFET (VBsemi)
  • EMB10 - PNP Digital Transistors (Rohm)
  • EMB10FHA - PNP -100mA -50V Complex Digital Transistors (ROHM)
  • EMB11 - Dual Digital Transistors (Rohm)
  • EMB11 - Dual Digital Transistors (JCET)
  • EMB1412 - EMB1412 MOSFET Gate Driver (Rev. B) (ETCTI)
  • EMB1428Q - EMB1428Q Switch Matrix Gate Driver (Rev. A) (ETCTI)
  • EMB1432Q - EMB1432Q 60-V 14-Channel Battery Stack Module Analog Front End (Rev. D) (ETCTI)
  • EMB1433Q - EMB1433Q 60-V 14-Channel Battery Stack Protection Chip with Programmable Window Comparator Supports Multi-Module Battery Packs (Rev. B) (ETCTI)
  • EMB1499Q - EMB1499Q Bidirectional Current DC-DC Controller (Rev. B) (ETCTI)
Other Datasheets by Excelliance MOS
  • EMB05N03GH - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMB05N10H - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMB05N10HS - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMB02K03HP - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMB02N03HR - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMB02N03HS - MOSFET
  • EMB02N60AB - MOSFET
  • EMB02N60CSB - MOSFET

Full PDF Text Transcription

Click to expand full text
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 5.0mΩ ID 75A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free EMB05N03HR ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=53A, RG=25Ω Repetitive Avalanche Energy2 L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg ±20 75 45 160 53 140 40 50 26 ‐55 to 150 100% UIS testing in condition of VD=15V, L=0.
Published: |