EMB07P03CS - P-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMB07P03CS
Manufacturer	Excelliance MOS
File Size	208.47 KB
Description	P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB07P03CS Datasheet

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Other Datasheets by Excelliance MOS

Part Number	Description
EMB07P03A	P-Channel Logic Level Enhancement Mode Field Effect Transistor
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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 6.8mΩ ID ‐80A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=‐35A, RG=25Ω Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient3 RJA 1Pulse width limited by maximum junction temperature.

Published: Apr 27, 2017 |