Datasheet Details
| Part number | EMB09K03VP |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 668.00 KB |
| Description | Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet |
 EMB09K03VP Datasheet
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| Part number | EMB09K03VP |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 668.00 KB |
| Description | Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet |
EMB09K03VP Datasheet
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: Q1 Q2 BVDSS 30V 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 20.0mΩ 9.0mΩ 30.0mΩ 15.0mΩ ID @TC=25℃ 32.0A 49.0A ID @TA=25℃ 8.0A 13.0A Dual N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH L = 0.05mH Power Dissipation Power Dissipation TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID ID IDM IAS EAS EAR PD PD Tj, Tstg LIMITS Q1 Q2 ±20 ±20 32 49 20 31 8 13 6 10 85 127 16 21 12.8 22.1 6.4 11.0 35.7 35.7 14.3 14.3 2.5 2.5 1.6 1.6 -55 to 150 UNIT V A mJ W W °C ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RθJC Junction-to-Ambient3 t≦10s RθJA Steady-State RθJA 1Pulse width limited by maximum junction temperature.
2Duty cycle < 1％ 390°C / W when mounted on a 1 in2 pad of 2 oz copper.
4Guarantee by Engineering test TYPICAL 2021/8/10 A.1 MAXIMUM Q1 Q2 3.5 3.5 50 50 90 90 UNIT °C/W P.1 EMB09K03VP ▪Q1_ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS MIN STATIC Drain-Source Breakdown Voltage4 Gate Threshold Voltage4 Gate-Body Leakage4 Zero Gate Voltage Drain Current4 On-State Drain Current1 Drain-Source On-State Resistance1,4 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250uA 30 VDS = VGS, ID = 250uA 1 VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS =20V, VGS =0V, TJ =125 °C VDS = 10V, VGS = 10V 32 VGS = 10V, ID = 8A VGS = 4.5V, ID = 5A VDS = 5V, ID = 5A DYNAMIC Input Capacitance
EMB09K03VP Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪.
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|---|---|
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