EMB17A03G
EMB17A03G is Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by Excelliance MOS.
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.)
17mΩ
ID 10A
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNIT
Gate‐Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 100 °C
ID IDM
10 7 40
Avalanche Current
IAS 12
Avalanche Energy Repetitive Avalanche Energy2
L = 0.1mH, ID=10A, RG=25Ω
L = 0.05mH
EAS EAR
5 ...
