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EMB17C03G - N & P-Channel Logic Level Enhancement Mode Field Effect Transistor

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Part number EMB17C03G
Manufacturer Excelliance MOS
File Size 215.86 KB
Description N & P-Channel Logic Level Enhancement Mode Field Effect Transistor
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EMB17C03G N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 30V ‐30V RDSON (MAX.) 17mΩ 20mΩ ID 10A ‐8A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate‐Source Voltage VGS N‐CH P‐CH V ±20 ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=8A, RG=25Ω(N) L = 0.1mH, ID=‐7A, RG=25Ω(P) Repetitive Avalanche Energy2 L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range ID IDM IAS EAS EAR PD Tj, Tstg 10 ‐8 7 ‐6 A 40 ‐32 10 ‐10 3.2 2.45 mJ 1.6 1.23 2 W 0.
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