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EMB17N03G - N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Part number EMB17N03G
Manufacturer Excelliance MOS
File Size 181.20 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
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EMB17N03G N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 17mΩ ID 12A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C 12 ID TA = 100 °C 8 IDM 48 Avalanche Current IAS 12 Avalanche Energy L = 0.1mH, ID=10A, RG=25Ω EAS 5 Repetitive Avalanche Energy2 L = 0.05mH EAR 2.5 Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 2.5 1 ‐55 to 150 100% UIS testing in condition of VD=15V, L=0.
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