EMB17N03G Overview
EMB17N03G N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1％ 350°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width 300 sec, Duty Cycle 2％.
Datasheet Details
| Part number | EMB17N03G |
|---|---|
| Datasheet | EMB17N03G-ExcellianceMOS.pdf |
| File Size | 181.20 KB |
| Manufacturer | Excelliance MOS |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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