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EMB18A04VB - Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

Description

Q1 Q2 BVDSS 40V 40V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 18mΩ 25mΩ 18mΩ 25mΩ ID @TC=25℃ ID @TA=25℃ 28A 28A 10A 10A Dual N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST

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Datasheet Details

Part number EMB18A04VB
Manufacturer Excelliance MOS
File Size 609.96 KB
Description Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor
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EMB18A04VB Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: Q1 Q2 BVDSS 40V 40V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 18mΩ 25mΩ 18mΩ 25mΩ ID @TC=25℃ ID @TA=25℃ 28A 28A 10A 10A Dual N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Q1 Q2 Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C L = 0.1mH L = 0.01mH L = 0.
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