Datasheet Details
| Part number | EMB18A04VB |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 609.96 KB |
| Description | Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet |
 EMB18A04VB Datasheet
|
|
|
| Part number | EMB18A04VB |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 609.96 KB |
| Description | Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet |
EMB18A04VB Datasheet
|
|
|
|
: Q1 Q2 BVDSS 40V 40V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 18mΩ 25mΩ 18mΩ 25mΩ ID @TC=25℃ ID @TA=25℃ 28A 28A 10A 10A Dual N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Q1 Q2 Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C L = 0.1mH L = 0.01mH L = 0.05mH VGS 20/-20 20/-20 ID 28 28 18 18 ID 10 10 8 8 IDM 95 95 IAS 25 25 EAS 31 31 EAS 3 3 EAR 16 16 Power Dissipation Power Dissipation TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C PD 24 24 9.6 9.6 PD 3.1 3.1 2 2 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 ▪100% UIS testing in condition of VD=35V, L=0.1mH, VG=10V, IL= 15A, Rated VDS=40V N-CH_Q1 ▪100% UIS testing in condition of VD=35V, L=0.1mH, VG=10V, IL= 15A, Rated VDS=40V N-CH_Q2 ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Q1 Q2 Junction-to-Case RθJC Junction-to-Ambient3 t≦10s RθJA Steady-State RθJA 1Pulse width limited by maximum junction temperature.
2Duty cycle < 1％ 360°C / W when mounted on a 1 in2 pad of 2 oz copper.
4Guarantee by Engineering test 5.2 5.2 40 40 60 60 2022/10/31 UNIT V A mJ W W °C UNIT °C/W P.1 EMB18A04VB ▪Q1_ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS MIN STATIC Drain-Source Breakdown Voltage4 Gate Threshold Voltage4 Gate-Body Leakage4 Zero Gate Voltage Drain Current4 On-State Drain Current1 Drain-Source On-State Resistance1,4 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) VGS = 0V, ID = 250uA 40 VDS = VGS, ID = 250uA 1.2 VDS = 0V, VGS = +20V/-20V VDS
EMB18A04VB Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪.
| Part Number | Description |
|---|---|
| EMB11A03G | MOSFET |
| EMB12K03GP | MOSFET |
| EMB12K03V | MOSFET |
| EMB12N03A | MOSFET |
| EMB12N03G | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12N03H | MOSFET |
| EMB12N03HR | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12N03V | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12N03VAT | MOSFET |
| EMB12N04A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |