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EMB22A04G - Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Datasheet Details

Part number EMB22A04G
Manufacturer Excelliance MOS
File Size 190.26 KB
Description Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMB22A04G Datasheet

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Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V RDSON (MAX.) 22mΩ ID 8A Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg EMB22A04G LIMITS ±20 8 7 32 2 1.3 ‐55 to 150 UNIT V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient3 RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ 362.5°C / W when mounted on a 1 in2 pad of 2 oz copper. TYPICAL MAXIMUM 25 62.
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