Excelliance MOS EMB22C04H
N & P-Channel Logic Level Enhancement Mode Field Effect Transistor
| Part No. | EMB22C04H |
|---|---|
| Datasheet | EMB22C04H Download |
| Manufacturer |  Excelliance MOS |
| Description | N & P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, IAS=15A, RG=25Ω(N) L = 0.1mH, IAS=‐10A, RG=25Ω(P) L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL ID IDM IAS EAS EAR PD PD Tj, Tstg TYPICAL Junction‐to‐Case R●JC Junction‐to‐Ambient3 R●JA 2018/3/20 EMB22C04H LIMITS N‐CH P‐CH ±20 ±20 33 ‐22 21 ‐14 48 ‐36 25 ‐20 11.25 5 UNIT V A mJ 5.6 2.5 41 W 16 2 W 1.28 ‐55 to 150 °C MAXIMUM 3 62.5 UNIT °C / W p.1 1Pulse width limited by maximum junction temperature. 2Duty cycle 1％ 362.5°C / W when mounted on a 1 in2 pad of 2 oz copper. EMB22C04HELECTRICAL CHARACTERISTICS
(TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS...
