EMB22C04H - N & P-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMB22C04H
Manufacturer	Excelliance MOS
File Size	228.90 KB
Description	N & P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB22C04H Datasheet
Additional preview pages of the EMB22C04H datasheet.

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N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 40V ‐40V RDSON (MAX.) 22mΩ 50mΩ ID 33A ‐22A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, IAS=15A, RG=25Ω(N) L = 0.1mH, IAS=‐10A, RG=25Ω(P) L = 0.

Published: Jun 23, 2024 |