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EMB24B03G
Dual P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
RDSON (MAX.)
24mΩ
ID
‐8A
UIS, Rg 100% Tested Pb‐Free Lead Plating
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate‐Source Voltage
VGS
±25
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C
‐8
ID
TC = 100 °C
‐6
IDM
‐32
Avalanche Current
IAS
‐12
Avalanche Energy
L = 0.1mH, ID=‐8A, RG=25Ω
EAS
3.2
Repetitive Avalanche Energy2
L = 0.05mH
EAR
1.6
Power Dissipation
TA = 25 °C TA = 100 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
2 1.1 ‐55 to 150
100% UIS testing in condition of VD=‐15V, L=0.
EMB24B03G Datasheet
