EMB26N10F Overview
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature.
EMB26N10F datasheet by Excelliance MOS.
| Part number | EMB26N10F |
|---|---|
| Datasheet | EMB26N10F-ExcellianceMOS.pdf |
| File Size | 206.63 KB |
| Manufacturer | Excelliance MOS |
| Description | MOSFET |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature.
View all Excelliance MOS datasheets
| Part Number | Description |
|---|---|
| EMB26N10A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB26N10E | MOSFET |
| EMB26N10G | MOSFET |
| EMB26N10H | MOSFET |
| EMB20D03H | MOSFET |
| EMB20N03A | MOSFET |
| EMB20N03G | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB20N03Q | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB20N03V | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB20N03VAA | MOSFET |