EMB30P03VAT - P-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMB30P03VAT
Manufacturer	Excelliance MOS
File Size	178.06 KB
Description	P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB30P03VAT Datasheet

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EMB30P03VAT P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 30mΩ ID ‐8A G S Pb‐Free Lead Plating & Halogen Free Bottom View S D D S D GD D PIN 1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg LIMITS ±20 ‐8 ‐6.3 ‐32 2.08 1.33 ‐55 to 150 UNIT V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient3 RJA 1Pulse width limited by maximum junction temperature.