EMB39P06CS Datasheet | Excelliance MOS

P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS RDSON (MAX.) ID ‐60V 41mΩ ‐26A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1m H, ID=‐20A, RG=25Ω L = 0.05m H Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg LIMITS ±20 ‐26 ‐18 ‐60 ‐20 20 10 50 20 ‐55 to 150 UNIT V A m J W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RθJC Junction‐to‐Ambient RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1％ 2013/5/21 TYPICAL MAXIMUM 2.5 50 UNIT °C / W p.1 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL...