EMB45A06G Overview
EMB45A06G Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1% 362.5°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width 300 sec, Duty Cycle 2%.
EMB45A06G datasheet by Excelliance MOS.
| Part number | EMB45A06G |
|---|---|
| Datasheet | EMB45A06G-ExcellianceMOS.pdf |
| File Size | 188.61 KB |
| Manufacturer | Excelliance MOS |
| Description | Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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EMB45A06G Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1% 362.5°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width 300 sec, Duty Cycle 2%.
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