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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
60mΩ
ID
3.5A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
Power Dissipation
TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
VGS ID IDM PD Tj, Tstg
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature. 2Duty cycle 1％
TYPICAL
EMB60N06J
LIMITS ±20 3.5 2.3 14 1.25 0.83
‐55 to 150
UNIT V
A
W °C
MAXIMUM 100
UNIT °C / W
2012/12/16 p.
EMB60N06J Datasheet
