EMB80P03G Datasheet | Excelliance MOS

P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V RDSON (MAX.) 80mΩ ‐3.5A S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg LIMITS ±20 ‐3.5 ‐3 ‐14 2.5 1 ‐55 to 150 UNIT V W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient3 RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ 350°C / W when mounted on a 1 in2 pad of 2 oz copper. TYPICAL MAXIMUM 25 50 UNIT °C / W 2012/12/31 p.1 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST...