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EMBA5C10G - N & P-Channel Logic Level Enhancement Mode Field Effect Transistor

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Datasheet Details

Part number EMBA5C10G
Manufacturer Excelliance MOS
File Size 210.31 KB
Description N & P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMBA5C10G Datasheet

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N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 100V ‐100V RDSON (MAX.) 150mΩ 250mΩ ID 3A ‐2.5A EMBA5C10G Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range ID IDM PD Tj, Tstg LIMITS N‐CH P‐CH ±20 ±20 3 ‐2.5 2.1 ‐1.8 12 ‐10 2 0.8 ‐55 to 150 UNIT V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient3 RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ 362.
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