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EMBA5N10AS - N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Part number EMBA5N10AS
Manufacturer Excelliance MOS
File Size 423.47 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH BVDSS 100V RDSON (MAX.)@VGS=10V 135mΩ RDSON (MAX.)@VGS=4.5V 170mΩ ID @TC=25℃ 10A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current L = 0.01mH Avalanche Energy L = 1.0mH Repetitive Avalanche Energy2 L = 0.
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