EMBA5N10AS Overview
N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1% 375°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width 300 sec, Duty Cycle 2%.
| Part number | EMBA5N10AS |
|---|---|
| Datasheet | EMBA5N10AS-ExcellianceMOS.pdf |
| File Size | 423.47 KB |
| Manufacturer | Excelliance MOS |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1% 375°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width 300 sec, Duty Cycle 2%.
See all Excelliance MOS datasheets
| Part Number | Description |
|---|---|
| EMBA5N10A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBA5N10CS | MOSFET |
| EMBA5N10G | MOSFET |
| EMBA5N10V | MOSFET |
| EMBA5A10G | MOSFET |
| EMBA5C10A | MOSFET |
| EMBA5C10G | N & P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBA5P06J | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBA5P06P | MOSFET |
| EMBA0A10G | MOSFET |