Datasheet4U.com

EMBA5N10CS Datasheet PDF

Excelliance MOS EMBA5N10CS

MOSFET

Part No. EMBA5N10CS
Datasheet EMBA5N10CS Download
Manufacturer
Excelliance MOS
Description MOSFET
Buy Stock & Price
EMBA5N10CS datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=12A, RG=25Ω L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case R●JC Junction‐to‐Ambient R●JA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1% TYPICAL EMBA5N10CS LIMITS ±20 10 7 40 12 7.2 3.6 30 13 ‐55 to 150 UNIT V A mJ W °C MAXIMUM 4.2 62.5 UNIT °C / W 2013/10/8 p.1 EMBA5N10CS

ELECTRICAL CHARACTERISTICS

(TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resis...
EMBA5N10CS page 2 preview EMBA5N10CS page 3 preview