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EMBB0P10A - P-Channel Logic Level Enhancement Mode Field Effect Transistor

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Datasheet Details

Part number EMBB0P10A
Manufacturer Excelliance MOS
File Size 227.35 KB
Description P-Channel Logic Level Enhancement Mode Field Effect Transistor
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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐100V RDSON (MAX.) 205mΩ ID ‐10A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=‐12A, RG=25Ω L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg EMBB0P10A LIMITS ±20 ‐10 ‐7 ‐40 ‐12 7.2 3.
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