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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
250V
D
RDSON (MAX.)
1.7Ω
ID
0.4A
G
Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
Power Dissipation
TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
VGS ID IDM PD Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐ Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
TYPICAL
EMBJ7N25J
LIMITS ±20 0.4 0.25 1.6 1.25 0.8
‐55 to 150
UNIT V
A
W °C
MAXIMUM 100
UNIT °C / W
2012/8/6 p.
EMBJ7N25J Datasheet
