EMBJ7N25J Datasheet | Excelliance MOS

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 250V RDSON (MAX.) 1.7Ω 0.4A Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐ Ambient RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ TYPICAL LIMITS ±20 0.4 0.25 1.6 1.25 0.8 ‐55 to 150 UNIT V W °C MAXIMUM 100 UNIT °C / W 2012/8/6 p.1 ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted) PARAMETER...