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EMD02N06TL8 - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

N-CH BVDSS 60V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=7V ID @TC=25℃ 1.9mΩ 2.5mΩ 270A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Volta

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Datasheet Details

Part number EMD02N06TL8
Manufacturer Excelliance MOS
File Size 509.46 KB
Description Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMD02N06TL8 Datasheet

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EMD02N06TL8 Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 60V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=7V ID @TC=25℃ 1.9mΩ 2.5mΩ 270A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage TC = 25 °C Continuous Drain Current1 Pulsed Drain Current1 Avalanche Current1 TC = 100 °C TA = 25 °C TA = 70 °C Avalanche Energy1 L = 0.1mH Repetitive Avalanche Energy2 L = 0.