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EMD02N10TL8 - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Description

N-CH BVDSS 100V RDSON (TYP.)@VGS=10V RDSON (TYP.)@VGS=7V 2.2mΩ 2.8mΩ ID @TC=25℃ 304.0A ID @TA=25℃ 29.0A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL G

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Datasheet Details

Part number EMD02N10TL8
Manufacturer Excelliance MOS
File Size 625.60 KB
Description Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
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Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 100V RDSON (TYP.)@VGS=10V RDSON (TYP.)@VGS=7V 2.2mΩ 2.8mΩ ID @TC=25℃ 304.0A ID @TA=25℃ 29.0A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 VGS TC = 25 °C TC = 100 °C ID TA = 25 °C TA = 70 °C ID IDM Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 IAS L = 0.1mH EAS L = 0.
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