Excelliance MOS EMD02N60CS
MOSFET
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 3mH, ID=2A, RG=25Ω L = 0.5mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case R●JC Junction‐to‐Ambient R●JA 1Pulse width limited by maximum junction temperature. 2Duty cycle 1% TYPICAL EMD02N60CS LIMITS ±30 2 1.25 8 2 6 1 30 12 ‐55 to 150 UNIT V A mJ W °C MAXIMUM 4.2 110 UNIT °C / W 2013/10/22 p.1 EMD02N60CSELECTRICAL CHARACTERISTICS
(TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current Drain‐Source On‐State Resistance1 Forward Transconductance1...