EMD03N06HS - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMD03N06HS
Manufacturer	Excelliance MOS
File Size	870.82 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMD03N06HS Datasheet
Additional preview pages of the EMD03N06HS datasheet.

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 3mΩ ID 97A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMD03N06HS LIMITS UNIT Gate-Source Voltage VGS ±20 V Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TC = 100 °C IDM 97 61 A 240 Avalanche Current IAS 75 Avalanche Energy L = 0.1mH, IAS=75A, RG=25Ω EAS Repetitive Avalanche Energy2 L = 0.05mH EAR 281 mJ 140 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 50 W 20 -55 to 150 °C 100% UIS testing in condition of VD=30V, L=0.

Published: Apr 26, 2017 |