EMD03N06HS Datasheet | Excelliance MOS

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 3mΩ 97A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate-Source Voltage ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TC = 100 °C Avalanche Current Avalanche Energy L = 0.1m H, IAS=75A, RG=25Ω Repetitive Avalanche Energy2 L = 0.05m H 281 m J Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 50...