EMDA5N10F Datasheet | Excelliance MOS

Description : BVDSS 100V RDSON (MAX.) 150mΩ 10A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TC = 100 °C Avalanche Current Avalanche Energy L = 0.1m H, ID=12A, RG=25Ω Repetitive Avalanche Energy2 L = 0.05m H Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg LIMITS ±20 10 7 40 12 7.2 3.6 27 11 -55 to 150 UNIT V A m J W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RJC Junction-to-Ambient RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ 3Pulsed drain current rating is package limited TYPICAL...