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EMDA5N10F - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

Description

BVDSS 100V RDSON (MAX.) 150mΩ ID 10A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC

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Datasheet Details

Part number EMDA5N10F
Manufacturer Excelliance MOS
File Size 360.85 KB
Description Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMDA5N10F Datasheet

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Single N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pin Description: BVDSS 100V RDSON (MAX.) 150mΩ ID 10A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TC = 100 °C IDM Avalanche Current IAS Avalanche Energy L = 0.1mH, ID=12A, RG=25Ω EAS Repetitive Avalanche Energy2 L = 0.05mH EAR Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg EMDA5N10F LIMITS ±20 10 7 40 12 7.2 3.
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