Datasheet Details
| Part number | EMDB0N25F |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 356.85 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet | EMDB0N25F-ExcellianceMOS.pdf |
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Overview: Single N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary:.
| Part number | EMDB0N25F |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 356.85 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet | EMDB0N25F-ExcellianceMOS.pdf |
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: BVDSS 250V RDSON (MAX.) 0.22Ω ID 18A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TC = 100 °C IDM Avalanche Current IAS Avalanche Energy L = 1mH, ID=10A, RG=25Ω EAS Repetitive Avalanche Energy2 L = 0.5mH EAR Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg EMDB0N25F LIMITS ±30 18 8 45 10 50 25 38 15 -55 to 150 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RJC Junction-to-Ambient RJA 1Pulse width limited by maximum junction temperature.
2Duty cycle 1％ 3Pulsed drain current rating is package limited 2022/12/19 TYPICAL MAXIMUM 3.3 65 UNIT °C / W p.1 EMDB0N25F ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 10mA VDS = VGS, ID = 250A VDS = 0V, VGS = ±30V VDS = 200V, VGS = 0V VDS = 200V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V VGS = 10V, ID = 9A VDS = 10V, ID = 9A DYNAMIC 250 V 2.0 3.7 4.5 ±100 nA 1 A 25 18 A 0.19 0.22 Ω 18 S Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge1,2 Gate-Source Charge1,2 Gate-Drain Charge1,2 Turn-On Delay Time1,2 Rise Time1,2 Turn-Off Delay Time1,2 Fall Time1,2 Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VGS = 0V, VDS = 25V, f = 1MHz VGS = 15mV, VDS = 0V, f = 1MHz VDS = 200V, VGS = 10V, ID
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