EMF02P02H - P-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMF02P02H
Manufacturer	Excelliance MOS
File Size	301.54 KB
Description	P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMF02P02H Datasheet
Additional preview pages of the EMF02P02H datasheet.

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Full PDF Text Transcription

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS -20V RDSON (MAX.) 3.2mΩ ID -100A G UIS, Rg 100% Tested S RoHS & Halogen Free & TSCA Compliant EMF02P02H ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±12 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C -100 ID TC = 100 °C -73 IDM -400 Avalanche Current IAS -100 Avalanche Energy L = 0.1mH, ID=-100A, RG=25Ω EAS 500 Repetitive Avalanche Energy3 L = 0.05mH EAR 250 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 69 27 -55 to 150 100% UIS testing in condition of VD=-15V, L=0.

Published: Apr 27, 2017 |