Excelliance MOS EMF09P02CS
P-Channel Logic Level Enhancement Mode Field Effect Transistor
| Part No. | EMF09P02CS |
|---|---|
| Datasheet | EMF09P02CS Download |
| Manufacturer |  Excelliance MOS |
| Description | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=‐25A, RG=25Ω L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg EMF09P02CS LIMITS ±8 ‐56 ‐35 ‐150 ‐25 62.5 31.25 56 22 ‐55 to 150 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case R●JC Junction‐to‐Ambient3 R●JA 1Pulse width limited by maximum junction temperature. 2Duty cycle 1％ 2016/3/11 TYPICAL MAXIMUM 2.5 62.5 UNIT °C / W p.1 EMF09P02CSELECTRICAL CHARACTERISTICS
(TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐S...
