EMF20A02G - Dual N?Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMF20A02G
Manufacturer	Excelliance MOS
File Size	223.95 KB
Description	Dual N?Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMF20A02G Datasheet
Additional preview pages of the EMF20A02G datasheet.

📁 Similar Datasheet

EMF20 - Power management (Rohm)
EMF21 - Power management (Rohm)
EMF22 - Power management (Rohm)
EMF23 - Power management (Rohm)
EMF23XV6T5 - Dual Transistor - Power Management (ON Semiconductor)
EMF24 - Dual Transistors (JCET)
EMF24 - dual transistors (JinYu)
EMF24 - Power management (Rohm)
EMF17 - Power management (Rohm)
EMF18 - Power management (dual transistors) (Rohm)

Other Datasheets by Excelliance MOS

EMF20A02V - MOSFET
EMF20B02G - MOSFET
EMF20B02V - P-Channel Logic Level Enhancement Mode Field Effect Transistor
EMF20C02G - MOSFET
EMF20N02J - N-Channel Logic Level Enhancement Mode Field Effect Transistor
EMF20N02JS - MOSFET
EMF20N02K - N?Channel Logic Level Enhancement Mode Field Effect Transistor
EMF20N02VA - N?Channel Logic Level Enhancement Mode Field Effect Transistor

Full PDF Text Transcription

Click to expand full text

EMF20A02G Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 20V RDSON (MAX.) 20mΩ ID 6A UIS 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=10A, RG=25Ω L = 0.05mH Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg ±12 6 4 24 10 5 2.5 2 0.8 ‐55 to 150 100% UIS testing in condition of VD=10V, L=0.1mH, VG=4.

Published: Apr 26, 2017 |