EMF20C02G - MOSFET

Excelliance MOS

Datasheet Details

Part number	EMF20C02G
Manufacturer	Excelliance MOS
File Size	255.35 KB
Description	MOSFET
Datasheet	EMF20C02G Datasheet
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N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 20V ‐20V RDSON (MAX.) 20mΩ 40mΩ ID 6A ‐5A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=6A, RG=25Ω(N) L = 0.1mH, ID=‐5A, RG=25Ω(P) L = 0.05mH Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient3 RJA 1Pulse width limited by maximum junction temperature.

Published: Apr 26, 2017 |