EMF21P02V - P-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMF21P02V
Manufacturer	Excelliance MOS
File Size	851.76 KB
Description	P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMF21P02V Datasheet
Additional preview pages of the EMF21P02V datasheet.

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -20V RDSON (MAX.) 21mΩ ID -18A P-Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C ID TA = 25 °C Pulsed Drain Current1 TC = 100 °C IDM TC = 25 °C Power Dissipation PD TC = 100 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD Tj, Tstg EMF21P02V LIMITS ±12 -18 -9 -12 -56 21 8.3 2.5 1.

Published: Apr 27, 2017 |