EMP18K03HPCS - Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

General Description

Q1 Q2 BVDSS 30V 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V ID @TC=25℃ 5.7mΩ 2.0mΩ 8.8mΩ 2.8mΩ 77A 172A ID @TA=25℃ 16A 29A Dual N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CO

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Datasheet Details

Part number	EMP18K03HPCS
Manufacturer	Excelliance MOS
File Size	424.47 KB
Description	Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMP18K03HPCS Datasheet

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EMP18K03HPCS Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: Q1 Q2 BVDSS 30V 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V ID @TC=25℃ 5.7mΩ 2.0mΩ 8.8mΩ 2.8mΩ 77A 172A ID @TA=25℃ 16A 29A Dual N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Q1 Q2 Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C L = 0.01mH L = 0.05mH VGS ±20 ±12 ID 77 172 48 126 ID 16 29 12 23 IDM 136 384 IAS 70 100 EAS 24.5 50 EAR 122.