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EMP21N03HC - N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Part number EMP21N03HC
Manufacturer Excelliance MOS
File Size 307.27 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 2.1mΩ ID 123A N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMP21N03HC LIMITS UNIT Gate-Source Voltage VGS ±20 V TC = 25 °C Continuous Drain Current1 ID TA= 25 °C(t≦10s) 123 43 A Pulsed Drain Current2 TA= 25 °C(Steady-State) 27 TC = 100 °C 78 IDM 400 Avalanche Current IAS Avalanche Energy L = 0.1mH, IAS=65A, RG=25Ω EAS Repetitive Avalanche Energy3 L = 0.
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