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EMP26P03H - Single P-Channel Logic Level Enhancement Mode Field Effect Transistor

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Description

P-CH BVDSS -30 V RDSON (MAX.)@VGS=-10V RDSON (MAX.)@VGS=-4.5V ID @TC=25℃ 2.5 mΩ 4.0 mΩ -230 A Single P Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-S

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Datasheet Details

Part number EMP26P03H
Manufacturer Excelliance MOS
File Size 356.83 KB
Description Single P-Channel Logic Level Enhancement Mode Field Effect Transistor
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EMP26P03H Single P-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: P-CH BVDSS -30 V RDSON (MAX.)@VGS=-10V RDSON (MAX.)@VGS=-4.5V ID @TC=25℃ 2.5 mΩ 4.0 mΩ -230 A Single P Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±25 Continuous Drain Current TC = 25 °C TC = 100 °C ID -230 -146 Continuous Drain Current TA = 25 °C TA = 70 °C ID -24 -19 Pulsed Drain Current1 IDM -453 Avalanche Current IAS -90 Avalanche Energy L = 0.1mH EAS 405 Repetitive Avalanche Energy2 L = 0.05mH EAR 202.5 Power Dissipation TC = 25 °C TC = 100 °C PD 201.6 80.
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