Datasheet Details
| Part number | EMP26P03H |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 356.83 KB |
| Description | Single P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet | EMP26P03H-ExcellianceMOS.pdf |
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Overview: EMP26P03H Single P-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪.
| Part number | EMP26P03H |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 356.83 KB |
| Description | Single P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet | EMP26P03H-ExcellianceMOS.pdf |
|
|
|
: P-CH BVDSS -30 V RDSON (MAX.)@VGS=-10V RDSON (MAX.)@VGS=-4.5V ID @TC=25℃ 2.5 mΩ 4.0 mΩ -230 A Single P Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA pliant ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±25 Continuous Drain Current TC = 25 °C TC = 100 °C ID -230 -146 Continuous Drain Current TA = 25 °C TA = 70 °C ID -24 -19 Pulsed Drain Current1 IDM -453 Avalanche Current IAS -90 Avalanche Energy L = 0.1mH EAS 405 Repetitive Avalanche Energy2 L = 0.05mH EAR 202.5 Power Dissipation TC = 25 °C TC = 100 °C PD 201.6 80.6 Power Dissipation TA = 25 °C TA = 70 °C PD 2.4 1.5 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 ▪100% UIS testing in condition of VD=25V, L=0.1mH, VG=10V, IL=54A, RG=25Ω,Rated VDS=-30V P-CH ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RθJC 0.62 Junction-to-Ambient3 t≦10s RθJA Steady-State RθJA 19 53 1Pulse width limited by maximum junction temperature.
2Duty cycle < 1％ 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C.
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