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EMP29N04E - N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Part number EMP29N04E
Manufacturer Excelliance MOS
File Size 373.37 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V RDSON (MAX.) 2.9mΩ ID 172A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMP29N04E LIMITS UNIT Gate-Source Voltage VGS ±20 V Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TC = 100 °C IDM 172 139 A 674 Avalanche Current IAS 69 Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH EAS L = 0.05mH EAR 236 mJ 118 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 227 W 90 -55 to 150 °C 100% UIS testing in condition of VD=20V, L=0.
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