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EMP31N03HQ - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

Description

N-CH BVDSS 30 V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 3.1 mΩ 4.2 mΩ ID @TC=25℃ 97 A ID @TA=25℃ 21 A Single N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL

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Datasheet Details

Part number EMP31N03HQ
Manufacturer Excelliance MOS
File Size 337.62 KB
Description Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMP31N03HQ Datasheet

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Full PDF Text Transcription

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EMP31N03HQ Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 30 V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 3.1 mΩ 4.2 mΩ ID @TC=25℃ 97 A ID @TA=25℃ 21 A Single N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current TC = 25 °C TC = 100 °C ID 97 61 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID 21 17 IDM 316 Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH L = 0.
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