Datasheet Details
| Part number | EMP31N03HQ |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 337.62 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Download |
EMP31N03HQ Download (PDF)
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| Part number | EMP31N03HQ |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 337.62 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Download |
EMP31N03HQ Download (PDF)
|
|
|
|
: N-CH BVDSS 30 V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 3.1 mΩ 4.2 mΩ ID @TC=25℃ 97 A ID @TA=25℃ 21 A Single N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current TC = 25 °C TC = 100 °C ID 97 61 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID 21 17 IDM 316 Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH L = 0.05mH IAS 57 EAS 162 EAR 81 Power Dissipation TC = 25 °C TC = 100 °C PD 50 20 Power Dissipation TA = 25 °C TA = 70 °C PD 2.5 1.6 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 ▪100% UIS testing in condition of VD=25V, L=0.1mH, VG=10V, IL=35A, Rated VDS=30V N-CH ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RθJC 2.5 Junction-to-Ambient3 t≦10s RθJA Steady-State RθJA 20 50 1Pulse width limited by maximum junction temperature.
2Duty cycle < 1％ 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C.
EMP31N03HQ Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪.
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