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N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.) @VGS=10V RDSON (MAX.) @VGS=4.5V
7.5mΩ 10.5mΩ
ID@TC=25°C
50A
Single N Channel MOSFET
UIS, Rg 100% Tested
Pb-Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMP75N03HR
LIMITS
UNIT
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
TC = 25 °C ID
TC = 100 °C
TA = 25 °C
50
35
A
12
Pulsed Drain Current1
TA = 70 °C
10
IDM
140
Avalanche Current
IAS
37.5
Avalanche Energy Repetitive Avalanche Energy2
L = 0.1mH
EAS
L = 0.
EMP75N03HR Datasheet
