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EMP85N10H - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

N-CH BVDSS 100V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V ID @TC=25℃ 7.5mΩ 10.0mΩ 107.0A ID @TA=25℃ 14.0A Single N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL

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Datasheet Details

Part number EMP85N10H
Manufacturer Excelliance MOS
File Size 395.61 KB
Description Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMP85N10H Datasheet

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Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 100V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V ID @TC=25℃ 7.5mΩ 10.0mΩ 107.0A ID @TA=25℃ 14.0A Single N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 100 °C ID Continuous Drain Current TA = 25 °C TA = 70 °C ID Pulsed Drain Current1 IDM Avalanche Current IAS Avalanche Energy L = 0.1mH EAS Repetitive Avalanche Energy2 L = 0.