Datasheet Details
| Part number | EMP85N10H |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 395.61 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet | EMP85N10H-ExcellianceMOS.pdf |
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Overview: Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪.
| Part number | EMP85N10H |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 395.61 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet | EMP85N10H-ExcellianceMOS.pdf |
|
|
|
: N-CH BVDSS 100V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V ID @TC=25℃ 7.5mΩ 10.0mΩ 107.0A ID @TA=25℃ 14.0A Single N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA pliant ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 100 °C ID Continuous Drain Current TA = 25 °C TA = 70 °C ID Pulsed Drain Current1 IDM Avalanche Current IAS Avalanche Energy L = 0.1mH EAS Repetitive Avalanche Energy2 L = 0.05mH EAR Power Dissipation TC = 25 °C TC = 100 °C PD Power Dissipation TA = 25 °C TA = 70 °C PD Operating Junction & Storage Temperature Range Tj, Tstg ▪100% UIS testing in condition of VD=50V, L=0.1mH, VG=10V, IL=18A, Rated VDS=100V N-CH ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Case RθJC Junction-to-Ambient3 RθJA 1Pulse width limited by maximum junction temperature.
2Duty cycle < 1％ 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C.
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