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FS5N60 - 600V N-Channel MOSFET

Description

This Power MOSFET is produced using Faircard’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excel

Features

  • 4.5A,600v,RDS(on)=2.2Ω@VGS=10V.
  • Gate charge (Typical 17nC).
  • High ruggedness.
  • Fast switching.
  • 100% AvalancheTested.
  • Improved dv/dt capability General.

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Datasheet Details

Part number FS5N60
Manufacturer FAIRCARD
File Size 711.83 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet FS5N60 Datasheet

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Full PDF Text Transcription

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FSP5N60/FS5N60 600V N-Channel MOSFET Features ■ 4.5A,600v,RDS(on)=2.2Ω@VGS=10V ■ Gate charge (Typical 17nC) ■ High ruggedness ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability General Description This Power MOSFET is produced using Faircard’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excellent avalanche characteristics .
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