FSP5N60 Datasheet | FAIRCARD

Features - 4.5A,600v,RDS(on)=2.2Ω@VGS=10V - Gate charge (Typical 17n C) - High ruggedness - Fast switching - 100% Avalanche Tested - Improved dv/dt capability General Description This Power MOSFET is produced using Faircard’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excellent avalanche characteristics . This power MOSFET is usually used at AC adaptors, on the battery charger and SMPS Absolute Maximum Ratings Symbol VDSS Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) IDM VGS EAS EAR dv/dt Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C)...