MOC212M Description
These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high-density applications, and eliminate the need for through-the-board mounting. Schematic Package Outline ANODE 1 8 N/C CATHODE 2 7 BASE N/C 3 6 COLLECTOR N/C 4 5 EMITTER Figure.
MOC212M Key Features
- Closely Matched Current Transfer Ratios
- Minimum BVCEO of 70 V Guaranteed
- MOC205M, MOC206M, MOC207M
- Minimum BVCEO of 30 V Guaranteed
- MOC211M, MOC212M, MOC213M, MOC216M, MOC217M
- Low LED Input Current Required for Easier Logic Interfacing
- MOC216M, MOC217M
- Convenient Plastic SOIC-8 Surface Mountable Package Style, with 0.050" Lead Spacing
- Safety and Regulatory Approvals
- UL1577, 2,500 VACRMS for 1 Minute