MOC212M
Overview
These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high-density applications, and eliminate the need for through-the-board mounting.
- Closely Matched Current Transfer Ratios
- Minimum BVCEO of 70 V Guaranteed - MOC205M, MOC206M, MOC207M
- Minimum BVCEO of 30 V Guaranteed - MOC211M, MOC212M, MOC213M, MOC216M, MOC217M
- Low LED Input Current Required for Easier Logic Interfacing - MOC216M, MOC217M
- Convenient Plastic SOIC-8 Surface Mountable Package Style, with 0.050" Lead Spacing
- Safety and Regulatory Approvals: - UL1577, 2,500 VACRMS for 1 Minute - DIN-EN/IEC60747-5-5, 565 V Peak Working Insulation Voltage
