Datasheet Summary
FSP8N60/FS8N60
600V N-Channel MOSFET
Features
- 7.5A,600v,RDS(on)=1.0Ω@VGS=10V
- Gate charge (Typical 30nC)
- High ruggedness
- Fast switching
- 100% AvalancheTested
- Improved dv/dt capability
General Description
This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge...