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FSP8N60 - 600V N-Channel MOSFET

Description

This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Features

  • 7.5A,600v,RDS(on)=1.0Ω@VGS=10V.
  • Gate charge (Typical 30nC).
  • High ruggedness.
  • Fast switching.
  • 100% AvalancheTested.
  • Improved dv/dt capability General.

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Datasheet Details

Part number FSP8N60
Manufacturer FASICARD
File Size 699.57 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet FSP8N60 Datasheet

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Full PDF Text Transcription

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FSP8N60/FS8N60 600V N-Channel MOSFET Features ■ 7.5A,600v,RDS(on)=1.0Ω@VGS=10V ■ Gate charge (Typical 30nC) ■ High ruggedness ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability General Description This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
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