FKBA0036 Datasheet | FETek

Description The FKBA0036 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBA0036 meet the Ro HS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. PRPAK5x6 Pin Configuration ( 5,6,7,8 ) (4) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Rating 100 ±20 58 38 130 16 18 119 2.5 -55 to 150 -55 to 150 ( 1,2,3 ) Units V V A A A m J A W W ℃ ℃ Typ. ----- Max. 62 1.05 Unit ℃/W ℃/W Data and specifications subject to change without notice. .fetek..tw Ver : A FETek Technology Corp. N-Ch 100V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss...