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FKBA8016 - N-Channel MOSFET

Datasheet Details

Part number FKBA8016
Manufacturer FETek
File Size 615.82 KB
Description N-Channel MOSFET
Datasheet download datasheet FKBA8016 Datasheet

General Description

The FKBA8016 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

The FKBA8016 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

PRPAK5X6 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=70℃ IDM EAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current1 Continuous Drain Current1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Rating 75 ±20 62 49 200 80 89 -55 to 150 -55 to 150 Units V V A A A mJ W ℃ ℃ Typ.

Overview

FETek Technology Corp.

 Super Low Gate Charge  100% EAS Guaranteed  Green Device Available  Excellent CdV/dt effect decline  Advanced high cell density Trench technology FKBA8016 N-Ch 80V Fast Switching.